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À la maison > Products > Module d'alimentation IGBT > APT65GP60B2G IGBT Power Module Transistors IGBTs Single

APT65GP60B2G IGBT Power Module Transistors IGBTs Single

Catégorie:
Module d'alimentation IGBT
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
APT65GP60B2G
Fabricant:
Microsemi Corporation
Description:
IGBT 600V 100A 833W TMAX
Catégorie:
Transistors - IGBTs - simples
Famille:
Transistors - IGBTs - simples
Série:
MOS 7® DE PUISSANCE
Introduction au projet

APT65GP60B2G Specifications

Part Status Not For New Designs
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 250A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Power - Max 833W
Switching Energy 605µJ (on), 896µJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) @ 25°C 30ns/91ns
Test Condition 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT65GP60B2G Packaging

Detection

APT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs Single

Envoyez le RFQ
Le stock:
Nombre de pièces:
Negotiable