RQ3E130BNTB Field Effect Transistor Transistors FETs MOSFETs Single
Catégorie:
Transistor à effet de champ
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
RQ3E130BNTB
Fabricant:
Semi-conducteur de Rohm
Description:
Transistor MOSFET N-CH 30V 13A HSMT8
Catégorie:
Transistors - FETs, transistors MOSFET - simples
Famille:
Transistors - FETs, transistors MOSFET - simples
Introduction au projet
RQ3E130BNTB Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 13A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Package / Case | 8-PowerVDFN |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
RQ3E130BNTB Packaging
Detection
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Le stock:
Nombre de pièces:
Negotiable