TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single
Catégorie:
Transistor à effet de champ
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
TPN1R603PL, L1Q
Fabricant:
Semi-conducteur et stockage de Toshiba
Description:
TRANSISTOR DE TRANSISTOR MOSFET DE PUISSANCE DE X35 PB-F
Catégorie:
Transistors - FETs, transistors MOSFET - simples
Famille:
Transistors - FETs, transistors MOSFET - simples
Série:
U-MOSIX-H
Introduction au projet
TPN1R603PL,L1Q Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 10V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance |
| Package / Case | 8-PowerVDFN |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
TPN1R603PL,L1Q Packaging
Detection
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Le stock:
Nombre de pièces:
Negotiable