STI26NM60N Field Effect Transistor Transistors FETs MOSFETs Single
Catégorie:
Transistor à effet de champ
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
STI26NM60N
Fabricant:
STMicroelectronics
Description:
Transistor MOSFET N-CH 600V 20A I2PAK
Catégorie:
Transistors - FETs, transistors MOSFET - simples
Famille:
Transistors - FETs, transistors MOSFET - simples
Série:
MDmesh™ II
Introduction au projet
STI26NM60N Specifications
| Part Status | Obsolete |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
STI26NM60N Packaging
Detection
Envoyez le RFQ
Le stock:
Nombre de pièces:
Negotiable