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STP12N65M5 Field Effect Transistor Transistors FETs MOSFETs Single

Catégorie:
Transistor à effet de champ
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
STP12N65M5
Fabricant:
STMicroelectronics
Description:
Transistor MOSFET N-CH 650V 8.5A TO-220
Catégorie:
Transistors - FETs, transistors MOSFET - simples
Famille:
Transistors - FETs, transistors MOSFET - simples
Série:
MDmesh™ V
Introduction au projet

STP12N65M5 Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 70W (Tc)
Rds On (Max) @ Id, Vgs 430 mOhm @ 4.3A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

STP12N65M5 Packaging

Detection

STP12N65M5 Field Effect Transistor Transistors FETs MOSFETs SingleSTP12N65M5 Field Effect Transistor Transistors FETs MOSFETs SingleSTP12N65M5 Field Effect Transistor Transistors FETs MOSFETs SingleSTP12N65M5 Field Effect Transistor Transistors FETs MOSFETs Single

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Le stock:
Nombre de pièces:
Negotiable